MMBV609LT1 |
RFQ for MMBV609LT1 Required Field |
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| Technical/Catalog Information | MMBV609LT1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| Packaging | Cut Tape (CT) |
| Capacitance @ Vr, F | 32pF @ 3V, 1MHz |
| Q @ Vr, F | 450 @ 3V, 50MHz |
| Capacitance Ratio | 2.4 |
| Voltage - Peak Reverse (Max) | 20V |
| Diode Type | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Capacitance Ratio Condition | C3/C8 |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMBV609LT1 MMBV609LT1 MMBV609LT1OSCT ND MMBV609LT1OSCTND MMBV609LT1OSCT |
| Product | Manufacturers | Pack | D/C |
| MMBV609LT1 | - | - | 05+ |
Features |
| • High Figure of Merit - Q = 450 (Typ) @ V R = 3.0 Vdc, f = 50 MHz• Guaranteed Capacitance Range• Dual Diodes Save Space and Reduce Cost• Surface Mount Package• Available in 8 mm Tape and Reel• Monolithic Chip Provides Improved Matching• Hyper Abrupt Junction Process Provides High Tuning Ratio |
|
Rating |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
20 |
Vdc |
| Forward Current |
IF |
100 |
mAdc |
| Device Dissipation@ TA= 25°C Derate above 25°C |
PD |
225 |
mW mW/°C |
| Junction Temperature |
TJ |
+125 |
°C |
| Storage Temperature Range |
Tstg |
55 to +150 |
°C |
